Study of Electronic transport properties of doped 8AGNR

被引:1
|
作者
Sharma, Uma Shankar [1 ]
Srivastava, Anurag [2 ,3 ]
Verma, U. P.
机构
[1] BSF Acad Tekanpur, Rustamji Inst Technol, Gwalior 475005, India
[2] ABV Indian Inst Informat Technol Management, Adv Mat Res Grp, Computat Nanoscience Technol Lab, Gwalior 474015, India
[3] Jiwaji Univ, Sch Studies Phys, Gwalior 474011, India
来源
SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷
关键词
GNR; Transport properties; DFT; GRAPHENE;
D O I
10.1063/1.4872968
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic and transport properties of 8-armchair graphene nanoribbon (8AGNR) with defect at different sites are investigated by performing first-principles calculations based on density functional theory (DFT). The calculated results show that the 8AGNR are semiconductor. The introduction of 3d transition metals, creates the non-degenerate states in the conduction band, makes 8AGNR metallic. The computed transmission spectrum confirms that AGNR are semiconducting in nature and their band gap remain unchanged and localized states appear when there is vacancy in their structures, and the conductance decreases due to defects compared with the pristine nanoribbon.
引用
收藏
页码:1386 / 1388
页数:3
相关论文
共 50 条
  • [1] Study of electronic transport properties of doped 8AGNR
    20142717882473
    (1) Rustamji Institute of Technology, BSF Academy Tekanpur, Gwalior-475005, India; (2) Advanced Materials Research Group, Computational Nanoscience and Technology Lab, ABV-Indian Institute of Information Technology and Management, Gwalior-474015, India; (3) School of Studies in Physics, Jiwaji University, Gwalior-474011, India, 1600, Board of Research in Nuclear Sciences; Department of Atomic Energy; Government of India (American Institute of Physics Inc.):
  • [2] Electronic and transport properties of U-cut edge patterned AGNR superlattice for RTD application
    Basumatary, Bikramjit
    Mathew, Agile
    MICRO AND NANOSTRUCTURES, 2024, 193
  • [3] Theoretical study of electronic transport properties of lead nanowires doped with silicon
    Zhang, Lishu
    Dai, Xinyue
    Zhou, Yi
    Zhao, Zhenyang
    Yin, Longwei
    Li, Hui
    COMPUTATIONAL MATERIALS SCIENCE, 2017, 136 : 198 - 206
  • [4] Structural, electronic, and transport properties of Ge doped graphene: A DFT study
    Gadhavi, Pratik M.
    Poopanya, Piyawong
    Talati, Mina
    PHYSICA B-CONDENSED MATTER, 2023, 666
  • [5] Electronic structure and transport properties of doped PbSe
    Peng, Haowei
    Song, Jung-Hwan
    Kanatzidis, M. G.
    Freeman, Arthur J.
    PHYSICAL REVIEW B, 2011, 84 (12)
  • [6] Electronic transport properties of graphene doped by gallium
    Mach, J.
    Prochazka, P.
    Bartosik, M.
    Nezval, D.
    Piastek, J.
    Hulva, J.
    Svarc, V.
    Konecny, M.
    Kormos, L.
    Sikola, T.
    NANOTECHNOLOGY, 2017, 28 (41)
  • [7] Investigation of properties of AGNR using N type doping for electronic applications
    Singh, Niharika
    Sharma, Preetika
    Sapra, Gaurav
    MATERIALS TODAY-PROCEEDINGS, 2020, 28 : 1588 - 1592
  • [8] Study of structural and electronic transport properties of Ce-doped LaMnO3
    Husain, S
    Choudhary, RJ
    Kumar, R
    Patil, SI
    Srivastava, JP
    PRAMANA-JOURNAL OF PHYSICS, 2002, 58 (5-6): : 1045 - 1049
  • [9] Theoretical study on structural, electronic, transport and thermoelectric properties of Si/Ge doped graphene
    Gadhavi, Pratik M.
    Poopanya, Piyawong
    Sivalertporn, Kanchana
    Talati, Mina
    COMPUTATIONAL CONDENSED MATTER, 2023, 37
  • [10] Study on ionic and electronic transport properties of calcium-doped GdAlO3
    Sinha, Amit
    Naefe, Helfried
    Sharma, Beant Prakash
    Gopalan, Prakash
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (03) : B309 - B314