Anomalous reduction of hot-carrier-induced ON-resistance degradation in n-type DEMOS transistors

被引:18
|
作者
Wu, K. M.
Chen, Jone F.
Su, Y. K.
Lee, J. R.
Lin, Y. C.
Hsu, S. L.
Shih, J. R.
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan
关键词
drain-extended MOS (DEMOS); high voltage; hot carrier;
D O I
10.1109/TDMR.2006.881461
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Anomalous hot-carrier degradation phenomenon was observed in a 0.5-mu m 12-V n-type drain-extended MOS transistors (N-DEMOS) with various n-type drain-drift (NDD) implant dosage. Under the same stress condition, the device with a higher NDD dosage produces a higher. substrate current, a slightly higher transconductance degradation, but a lower ON-resistance (R-ON) degradation. Two degradation mechanisms are identified from the analysis of the electrical data and two-dimensional device simulations. The first mechanism is hot-electron injection in the accumulation region near the junction of the channel and accumulation regions. The second mechanism is hot-hole injection in the accumulation region near the spacer. This injection of hot holes creates a positive-charge trapping in the gate oxide, resulting in negative mirror charges in the accumulation region that reduces R-ON. The, second mechanism is identified to account for the anomalous lower R-ON degradation.
引用
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页码:371 / 376
页数:6
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