Raman spectroscopy of hydrogen molecules in GaAs

被引：10
|
作者：
Leitch, AWR [1 ]
Weber, J [1 ]
机构：
[1] Max Planck Inst Festkorperforsch, D-70506 Stuttgart, Germany
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.60.13265
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The room temperature Raman vibrational modes of isolated H-2, D-2, and HD molecules in GaAs exposed to a H-2, H-2, and H-2:D-2 plasma, have been measured at 3911, 2827, and 3429 cm(-1), respectively. At low temperatures the ortho-para modes of the H-2 line are resolved. Decreasing the temperature to 10 K causes the H-2 Raman frequency to increase by 14 to 3925 cm(-1). A lack of splitting of the H-2 mode under uniaxial stress confirms that the H-2 molecule is free to rotate within the GaAs lattice. [S0163-1829(99)09043-8].
引用
收藏
页码：13265 / 13268
页数：4
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