HCl assisted growth of thick 4H-SiC epilayers for bipolar devices

被引：1
|
作者：
Kallinger, Birgit [1 ]
Ehlers, Christian [1 ]
Berwian, Patrick [1 ]
Rommel, Mathias [1 ]
Friedrich, Jochen [1 ]
机构：
[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷
关键词：
4H-SiC epitaxy; CVD; chloride assisted growth; carrier lifetime; SILICON-CARBIDE; CARRIER LIFETIME; DEFECTS;
D O I：
10.4028/www.scientific.net/MSF.778-780.210
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 mu m/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 10(13) cm(-3). But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z(1/2). For low growth rates, the Z(1/2) concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z(1/2) concentration increases with increasing HCl addition.
引用
收藏
页码：210 / 213
页数：4
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