Gauge-invariant formulation of high-field transport in semiconductors

In this paper we revisit the conventional description of carrier-phonon scattering in the presence of high electric fields by means of a gauge-invariant density-matrix approach. The proposed formulation of the transport problem allows us, on the one hand, to provide a gauge-independent formulation of Fermi's golden rule; on the other hand, our analysis clearly shows that in the standard treatments of high-field carrier-phonon scattering-also referred to as intracollisional field effect-the possible variation of the basis states has been usually neglected. This is recognized to be the origin of the apparent discrepancy between scalar- and vector-potential treatments of the problem; indeed, a proper account of such contributions leads, in general, to an ill-defined Markov limit in the carrier-phonon interaction process, assigning to the scalar-potential or Wannier-Stark picture a privileged role. The neglect of such Zener-like contributions in the transport equation leads to a wrong estimation of the high-field voltage-current characteristics, and may partially account for the surprisingly good agreement between semiclassical and rigorous quantum-transport calculations previously reported. This is confirmed by fully three-dimensional simulations of charge transport in state-of-the-art semiconductor superlattices, which show a significant current overestimation.