Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to High-Q Microresonators

被引:56
|
作者
Javerzac-Galy, Clement [1 ]
Kumar, Anshuman [1 ]
Schilling, Ryan D. [1 ]
Piro, Nicolas [1 ]
Khorasani, Sina [2 ]
Barbone, Matteo [3 ]
Goykhman, Ilya [3 ]
Khurgin, Jacob B. [4 ]
Ferrari, Andrea C. [3 ]
Kippenberg, Tobias J. [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland
[2] Univ Vienna, Vienna Ctr Quantum Sci & Technol VCQ, A-1090 Vienna, Austria
[3] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England
[4] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA
基金
英国工程与自然科学研究理事会;
关键词
2D materials; whispering gallery mode resonator; electronic and optical properties; WSe2; transition metal dichalcogenides; 2-DIMENSIONAL MATERIALS; DYNAMICS; GRAPHENE; SILICA; LASERS; MONO; WS2;
D O I
10.1021/acs.nanolett.8b00749
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present quantum yield measurements of single layer WSe2 (1L-WSe2) integrated with high-Q (Q > 10(6)) optical microdisk cavities, using an efficient (eta > 90%) near-field coupling scheme based on a tapered optical fiber. Coupling of the excitonic emission is achieved by placing 1L-WSe2 in the evanescent cavity field. This preserves the microresonator high intrinsic quality factor (Q > 10(6)) below the bandgap of 1L-WSe2. The cavity quantum yield is QY(c) approximate to 10(-3), consistent with operation in the broad emitter regime (i.e., the emission lifetime of 1L-WSe2 is significantly shorter than the bare cavity decay time). This scheme can serve as a precise measurement tool for the excitonic emission of layered materials into cavity modes, for both in plane and out of plane excitation.
引用
收藏
页码:3138 / 3146
页数:9
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