Calculation of the high-frequency conductivity and the Hall constant of a thin semiconductor film.

被引：0

作者：

Savenko, O. V. ^{[1
]}

Romanov, D. N. ^{[1
]}

Kuznetsova, I. A. ^{[1
]}

机构：

[1] PG Demidov Yaroslavl State Univ, Sovetskaya St 14, Yaroslavl 150000, Russia

来源：

INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016 | 2016年 / 10224卷

关键词：

thin film; Boltzmann equation; distribution function; mirrority coefficient; conductivity; Hall constant; METALLIC-FILMS;

D O I：

10.1117/12.2265659

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The task about calculation of high-frequency conductivity and Hall constant of a thin semiconductor film is solved by the kinetic method. This film is placed in transverse stationary magnetic field and longitudinal alternative electric field. The ratio between film thickness and mean free path of charge carriers is assumed to be arbitrary. Skin effect is negligible. The diffuse-specular mechanism of charge carriers scattering from film surfaces is considered in the view of equal mirrority coefficients of the upper and lower film surfaces. The dependences of non-dimensional conductivity and Hall constant on non-dimensional parameters: electric field frequency, magnetic field induction and film thickness are investigated. The comparative analysis of obtained results with the calculations for the case of a metal film are made.

引用

页数：10

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