Theory of the DC magnetotransport in laterally modulated quantum hall systems near filling v=1/2

A quasiclassical theory for DC magnetotransport in a modulated quantum Hall system near filling factor v = 1/2 is presented. A weak one-dimensional electrostatic potential acts on the two-dimensional electron gas. Closed form analytic expressions are obtained for the resistivity rho(perpendicular to) corresponding to a current at right angles to the direction of the modulation lines as well as a smaller component rho(\\) for a current along the direction of the modulation lines. It is shown that both resistivity components are affected by the presence of the modulation. Numerical results are presented for rho(perpendicular to) and rho(\\) and show reasonable agreement with the results of recent experiments.