Effects of the increase of side erase band width on off-track capability of high frequency magnetic recording

被引：4
|
作者：
Huang, M
Yeo, D
Tran, T
机构：
[1] Advanced Applications Group, Research and Development Department Read-Rite Corporation, Milpitas, CA 95035
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期
关键词：
D O I：
10.1109/20.538668
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Method of measuring side erase band width with a spinstand has been improved using narrow-band overwrite fitter read-back track profile, which provides a sharp vertex and two straight side lints. The resultant measurements are in good agreement with those obtained from '747' tests. Effects of the increase of the side erase band width caused from high frequency magnetic recording has been investigated. The impact on the off-track capability due to increase of side erase band width of high frequency magnetic recording is discussed.
引用
收藏
页码：3494 / 3496
页数：3
相关论文
共 23 条
123