Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si

被引：12
|
作者：
Lin, Yow-Jon [1 ]
Yang, Shih-Hung [1 ]
机构：
[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 116卷 / 01期
关键词：
INTERFACE; FILMS; ZNO;
D O I：
10.1007/s00339-013-8166-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.
引用
收藏
页码：91 / 95
页数：5
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