Semi-analytical computation and 3D modeling of the microwave photo-induced load in CPW technology

被引：3

作者：

Gary, Rene ^{[1
]}

Arnould, Jean-Daniel ^{[1
]}

Vilcot, Anne ^{[1
]}

机构：

[1] Univ Grenoble 1, CNRS, INPG, UMR 5130,IMEP, F-38016 Grenoble 1, France

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2006年 / 48卷 / 09期

关键词：

Hankel transforms; photo-induced; optical control; 3D resolution;

D O I：

10.1002/mop.21754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To be faster and more precise than the numerical technique for the computation of the photo-induced plasma in semiconductor. all analytical solution has to be developed. In this article, the Hankel transform is lived to simplify the solution of the differential equation of second order with nonsconstant coefficient, known as the diffusion equations. The resulting expression of the 3D carrier densin, includes all the physical parameters of the substrate and the laser beam as well. A parametric study was also feasible using the developed expressions. (C) 2006 Wiley Periodicals. Inc.

引用

页码：1718 / 1721

页数：4

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