First stages of the formation of Ni silicide by atom probe tomography

被引：38
|
作者：
Hoummada, K.
Cadel, E.
Mangelinck, D.
Perrin-Pellegrino, C.
Blavette, D.
Deconihout, B.
机构：
[1] Univ Paul Cezanne, Lab Mat & Microelect Provence, UMR 6137, Fac Sci & Tech, F-13397 Marseille 20, France
[2] Univ Rouen, Grp Phys Mat, UMR 6634, CNRS, F-76801 St Etienne, France
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期
关键词：
D O I：
10.1063/1.2370501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atom probe tomography assisted by femtosecond laser pulses has been performed on a Ni(Pt) film on (100)Si. Two phases with different compositions were found to form during deposition at room temperature: a NiSi layer with a relatively constant thickness of approximately 2 nm and a particle of Ni2Si. The shape of the Ni2Si particle is in accordance with nucleation followed by lateral growth formation. This confirms the growth model deduced from calorimetric measurement of silicides and intermetallics and from atom probe tomography studies of the Al/Co system. A nonuniform redistribution of Pt was also observed. (c) 2006 American Institute of Physics.
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页数：3
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