Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications

We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque magne toresistive random access memory (STT-MRAM) devices by using double spin-magnetic tunnel junctions (DSMTJs). A write-error-rate (WER) of 1E-6 was achieved in 194 deviceswith 250-pswrite pulses and tight distributions. The WER = 1E-6 was also demonstrated over a temperature range of -40 degrees C-85 degrees C in a single device with 225-ps write pulses. No degradationwas observed after 1E 10 write cycles in selected single devices, written with 250-ps write pulses. We compare the DS-MTJ device switching performance with the published results from the state-of-the-art three-terminal spin-orbit torque (SOT) MRAM devices and show a 10x reduction in switching current density (J(c)) and 3-10x reduction in power consumption for devices with similar energy barriers (E-b).