A K-/Ka-band concurrent dual-band low-noise amplifier employing a feedback notch technique with simultaneous passband gain and stopband rejection control

被引：0
|
作者：
Lee, Jaeyoung [1 ]
Cam Nguyen [2 ]
机构：
[1] NXP Semicond, Chandler, AZ 85224 USA
[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2018年 / 60卷 / 06期
关键词：
BiCMOS; CMOS; concurrent multiband; dual-band; inductor feedback; low-noise amplifier; notch filter; RFIC;
D O I：
10.1002/mop.31169
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A K-/Ka-band concurrent dual-band low-noise amplifier (LNA) employing an inductor feedback dual-band load is presented. The dual-band LNA can control the passband gain and stopband rejection performances to overcome the gain and notch performance degradation from process variations by adjusting the bias level of the second-stage's inverting amplifier. The concurrent dual-band LNA achieves peak gains of 21.3/23.2 dB at 21.5/36.5 GHz, respectively, and best noise figures of 2.6/2.5 dB at the low/high passbands, respectively. The dual-band LNA exhibits the best noise figure and gain-balance performances as compared to those operating at similar frequencies.
引用
收藏
页码：1429 / 1435
页数：7
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