Processing techniques in the manufacture of 100nm node and below inspection test reticles

被引:0
|
作者
Cheng, N [1 ]
Su, C [1 ]
Chen, F [1 ]
Cheng, B [1 ]
Taylor, D [1 ]
机构
[1] Photron PSMC, Hsinchu, Taiwan
来源
PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY IX | 2002年 / 4754卷
关键词
50keV; e-beam; OPC;
D O I
10.1117/12.476965
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Manufacturing technology in the photomask process is critical for building devices of today's specifications. However, when building masks for equipment suppliers, it is necessary to provide capability at least two years in advance of current requirements. Of particular interest are masks used to characterize and benchmark inspection tools. This paper demonstrates and compares the mask processing capabilities of 50keV e-beam writing platforms in the effort to build a new inspection test mask pattern. Both standard and OPC patterns will be examined to understand the impact of each to the mask manufacturer. In addition to 50keV e-beam platforms, complementary high-end process and metrology tools will be utilized and reported.
引用
收藏
页码:554 / 557
页数:4
相关论文
共 43 条
  • [1] Variation status in 100nm CMOS process and below
    Nagase, K
    Ohkawa, SI
    Aoki, M
    Masuda, H
    ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2004, : 257 - 261
  • [2] Inspection of laser-written reticles for the 90 nm node
    Vacca, A
    Ahmadian, M
    Chen, JX
    Kalk, F
    22ND ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2002, 4889 : 984 - 992
  • [3] Photomask CD metrology at the 100nm node
    Allsop, J
    Johnson, S
    Demarteau, M
    Wismans, O
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY IX, 2002, 4754 : 745 - 757
  • [4] GENERATION OF LIGHT BELOW 100NM IN HG VAPOR
    FREEMAN, RR
    JOPSON, RM
    BOKOR, J
    AIP CONFERENCE PROCEEDINGS, 1982, (90) : 422 - 430
  • [5] Challenge and innovation of VLSI design below 100nm
    Sasaki, H
    2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation & Test (VLSI-TSA-DAT), Proceedings of Technical Papers, 2005, : 144 - 144
  • [6] New die to database inspection algorithm for inspection of 90-nm node reticles
    Garcia, H
    Volk, W
    Watson, S
    Hess, C
    Aquino, C
    Wiley, J
    Mack, C
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY X, 2003, 5130 : 364 - 374
  • [7] 257nm wavelength mask inspection for 65nm node reticles
    Yoshikawa, R
    Tanizaki, H
    Watanabe, T
    Inoue, H
    Ogawa, R
    Endo, S
    Ikeda, M
    Takahashi, Y
    Watanabe, H
    PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI, 2004, 5446 : 313 - 319
  • [8] Solutions for the 100nm node with ultrathin silicon nitride gates
    Levy, S
    Bloom, R
    Lam, J
    Kepten, A
    SOLID STATE TECHNOLOGY, 2001, 44 (04) : 75 - +
  • [9] Beyond the 100nm node: single-wafer RTP
    Ramachandran, B
    Forstner, H
    Chiao, E
    Miner, G
    Haas, B
    SOLID STATE TECHNOLOGY, 2003, 46 (05) : 95 - +
  • [10] Advanced write tool effects on 100nm node OPC
    Buck, P
    Green, K
    Ibsen, K
    Nakagawa, K
    Hong, DS
    Krishnan, P
    Coburn, D
    22ND ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2002, 4889 : 147 - 156