Electroluminescence from thin films of europium silicates

被引：0
|
作者：
Qi, JF [1 ]
Matsumoto, T [1 ]
Tanaka, M [1 ]
Masumoto, Y [1 ]
机构：
[1] Japan Sci & Technol Corp, ERATO, Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan
来源：
PHYSICS AND CHEMISTRY OF LUMINESCENT MATERIALS | 2000年 / 99卷 / 40期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Thin films of europium silicates were fabricated on Si (100) substrates by a reactive radio frequency magnetron sputtering method. X-ray photoelectron spectroscopy and x-ray diffraction spectroscopy showed that the films consisted of europium silicates, silicon and europium oxides. Electroluminescent devices based on the europium silicate luminescent layer exhibit uniform-intense broad band electroluminescence with an external quantum efficiency of about 0.1% and a low operating threshold voltage (about 6 V).
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页码：185 / 193
页数：5
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