Highly anisotropic commensurability oscillations in two-dimensional holes at the GaAs/AlGaAs (311)A interface

被引：1

作者：

Yau, JB ^{[1
]}

Lu, JP ^{[1
]}

Manoharan, HC ^{[1
]}

Shayegan, M ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

PHYSICA E | 2000年 / 6卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

two-dimensional hole systems; commensurability oscillations; anisotropy;

D O I：

10.1016/S1386-9477(99)00209-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Measurements of commensurability oscillations in GaAs/AlGaAs two-dimensional (2D) hole systems grown on GaAs (3 1 1)A substrates reveal a remarkable anisotropy: the amplitude of the measured commensurability oscillations along the [(2) over bar 3 3] direction is about 100 times larger than along [0 1 (1) over bar]. For 2D electron systems at similar interfaces, however, we observe nearly isotropic oscillations, suggesting that the anomalous anisotropy is intrinsic to GaAs 2D holes at the (3 1 1)A interface. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：453 / 456

页数：4

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