Growth and magnetic properties of Ge1-xMnxTe

被引：0

作者：

Asada, H ^{[1
]}

Fukuma, Y ^{[1
]}

Koyanagi, T ^{[1
]}

机构：

[1] Yamaguchi Univ, Grad Sch Sci & Engn, Dept Symbiot Environm Syst Engn, Ube, Yamaguchi 7558611, Japan

来源：

PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS | 2001年 / 2卷

关键词：

diluted magnetic semiconductor; chalcogenide; ferromagnetism; phase-change; fine structure;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The film growth and magnetic properties of IV-VI diluted semiconductor Ge1-xMnxTe by ionized-cluster beam technique are presented. Ge1-xMnxTe epitaxial film with the Mn content up to 0.96 is successfully prepared on BaF2 substrate with the GeTe buffer layer of 1000 Angstrom. The dependence of magnetic property on Mn content and carrier concentration is examined. The highest Curie temperature obtained in this study was 140 K at Mn content of 0.51. The carrier concentration in Ge1-xMnxTe was changed by controlling the stoichiometric composition. The hysteresis loop in magnetization curve changes to squarer in shape and magnetic moments per Mn atom become larger with the increase of carrier concentration, which can be interpreted in terms of carrier induced ferromagnetism. The fabrication of crystalline fine structure using the phase change technique is also presented.

引用

页码：268 / 271

页数：4

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