2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1-x)Se2x Monolayers

被引：337

作者：

Mann, John ^{[1
]}

Ma, Quan ^{[1
]}

Odenthal, Patrick M. ^{[1
]}

Isarraraz, Miguel ^{[1
]}

Le, Duy ^{[2
]}

Preciado, Edwin ^{[1
]}

Barroso, David ^{[1
]}

Yamaguchi, Koichi ^{[1
]}

Palacio, Gretel von Son ^{[1
]}

Andrew Nguyen ^{[1
]}

Tai Tran ^{[1
]}

Wurch, Michelle ^{[1
]}

Ariana Nguyen ^{[1
]}

Klee, Velveth ^{[1
]}

Bobek, Sarah ^{[1
]}

Sun, Dezheng ^{[1
,3
,4
]}

Heinz, Tony F. ^{[3
,4
]}

Rahman, Talat S. ^{[2
]}

Kawakami, Roland ^{[1
]}

Bartels, Ludwig ^{[1
]}

机构：

[1] Univ Calif Riverside, Riverside, CA 92521 USA

[2] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[3] Columbia Univ, Dept Phys, New York, NY USA

[4] Columbia Univ, Dept Elect Engn, New York, NY USA

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 09期

基金：

美国国家科学基金会;

关键词：

molybdenum disulfide; molybdenum diselenide; transition metal dichalcogenides; CVD; alloys; bandgap engineering; atomically thin films; MOS2 ATOMIC LAYERS; LARGE-AREA; VALLEY POLARIZATION; GROWTH; PHOTOLUMINESCENCE; GRAPHENE; FILMS;

D O I：

10.1002/adma.201304389

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

MoS2(1-x) Se2x single-layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single-layer MoS2) to 1.55 eV (pure single-layer MoSe2) permitting straightforward bandgap engineering. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1399 / 1404

页数：6

共 50 条

[1] Adsorption and Diffusion of Lithium on Monolayer Transition Metal Dichalcogenides (MoS2(1-x)Se2x) Alloys
Ersan, Fatih
Gokoglu, Gokhan
Akturk, Ethem
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (51): : 28648 - 28653
[2] The electronic and optical properties of MoS2(1-x)Se2x and MoS2(1-x)Te2x monolayers
Rajbanshi, Biplab
Sarkar, Sunandan
Sarkar, Pranab
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (39) : 26166 - 26174
[3] Tunable nonlinear anisotropic Rashba splitting in monolayer transition metal dichalcogenide MoS2(1-x)Se2x alloys
Chakraborty, Souvick
Raj, Satyabrata
PHYSICAL REVIEW B, 2023, 108 (16)
[4] Synthesis of Monolayer MoS2(1-x)Se2x Alloy and Photoelectric Properties of MoS2(1-x)Se2x (x=0.25) Field-Effect Transistor
Zhang Peiru
Liu Huan
Hu Jiaxing
Deng Lier
ACTA OPTICA SINICA, 2022, 42 (16)
[5] MoS2(1-x)Se2x Nanobelts for Enhanced Hydrogen Evolution
Yang, Lei
Wang, Wenhui
Fu, Qi
Zhang, Jingyu
Xiang, Bin
ELECTROCHIMICA ACTA, 2015, 185 : 236 - 241
[6] Synthesis of MoS2(1-x)Se2x and WS2(1-x)Se2x alloys for enhanced hydrogen evolution reaction performance
Hussain, Sajjad
Akbar, Kamran
Vikraman, Dhanasekaran
Karuppasamy, K.
Kim, Hyun-Seok
Chun, Seung-Hyun
Jung, Jongwan
INORGANIC CHEMISTRY FRONTIERS, 2017, 4 (12): : 2068 - 2074
[7] Effects of Interlayer Coupling and Band Offset on Second Harmonic Generation in Vertical MoS2/MoS2(1-x)Se2x Structures
Chinh Tam Le
Kim, Jungcheol
Ullah, Farman
Anh Duc Nguyen
Thao Nhi Nguyen Tran
Tuan-Em Le
Chung, Koo-Hyun
Cheong, Hyeonsik
Jang, Joon, I
Kim, Yong Soo
ACS NANO, 2020, 14 (04) : 4366 - 4373
[8] Large-scale MoS2(1-x)Se2x monolayers synthesized by confined-space CVD
Zhang, Jinming
Qian, Yezheng
Nan, Haiyan
Gu, Xiaofeng
Xiao, Shaoqing
NANOTECHNOLOGY, 2021, 32 (35)
[9] 单层MoS2（1-x）Se2x合金的合成及MoS2（1-x）Se2x（x=0.25）场效应晶体管的光电特性
张佩茹
刘欢
胡加兴
邓立儿
光学学报, 2022, 42 (16) : 185 - 193
[10] Bandgap tuning of Monolayer MoS2(1-x)Se2x alloys by optimizing parameters
Bay, Mehmet
Ozden, Ayberk
Ay, Feridun
Perkgoz, Nihan Kosku
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 99 : 134 - 139

← 1 2 3 4 5 →