Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films

被引：27
|
作者：
Marti, X. [1 ]
Fina, I. [1 ]
Skumryev, V. [2 ,3 ]
Ferrater, C. [4 ,5 ]
Varela, M. [4 ,5 ]
Fabrega, L. [1 ]
Sanchez, F. [1 ]
Fontcuberta, J. [1 ]
机构：
[1] ICMAB CSIC, Bellaterra 08193, Spain
[2] Univ Autonoma Barcelona, Dept Fis, Bellaterra 08193, Spain
[3] Inst Catala Recerca & Estudis Avancats, Barcelona 08010, Spain
[4] Univ Barcelona, IN2UB, Barcelona 08028, Spain
[5] Univ Barcelona, FAO, Barcelona 08028, Spain
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 14期
关键词：
Financial support by the Spanish Government (Project Nos. MAT2008-06761-C03 and NANOSELECT CSD2007-00041) and by EU [Project MaCoMuFi (No. FP6-03321)] is acknowledged;
D O I：
10.1063/1.3238287
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Orthorhombic YMnO3 epitaxial thin films were grown on Nb (0.5%)-doped SrTiO3 (001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. Dielectric properties were investigated as a function of the temperature and magnetic field. The dielectric peak occurring at temperatures below the antiferromagnetic ordering is proved to be magnetoelectric and its amplitude is dependent on the unit cell distortion. These findings allow tailoring ferromagnetic and magnetoelectric properties via epitaxial strain. (C) 2009 American Institute of Physics. [doi:10.1063/1.3238287]
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页数：3
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