Accurate defect recombination parameters: what are the limitations of current analyses?

被引:0
|
作者
Rougieux, Fiacre E. [1 ]
Sun, Chang [2 ]
Zhu, Yan [1 ]
Macdonald, Daniel H. [2 ]
机构
[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW, Australia
[2] Australian Natl Univ, Coll Engn & Comp Sci, Res Sch Engn, Canberra, ACT 0200, Australia
基金
澳大利亚研究理事会;
关键词
Recombination; multivalent; defect; flaws; Deep Level Transient Spectroscopy; Temperature and Injection Dependent Lifetime Spectroscopy; BAND-GAP; SILICON; CAPTURE;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
A key strategy for further reducing the cost of solar electricity is through the development of very-high efficiency silicon solar cells (> 27%). The challenge in achieving this goal lies in overcoming limitations imposed by the electronic quality of the silicon wafers themselves. To overcome this challenge, there is an urgent need for a refined understanding of defects limiting the electronic quality of silicon wafers. This paper provides a nuanced and detailed picture what constitutes accurate recombination parameters for defects in silicon. It outlines three widespread issues in existing measurements of recombination parameters. It enables robust simulation of the lifetime in silicon for solar cell applications.
引用
收藏
页码:2520 / 2523
页数:4
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