Wettability and crystalline orientation of Cu nanoislands on SiO2 with a Cr underlayer

被引:9
|
作者
Hu, M [1 ]
Noda, S [1 ]
Okubo, T [1 ]
Komiyama, H [1 ]
机构
[1] Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 03期
关键词
D O I
10.1007/s00339-004-2604-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.
引用
收藏
页码:625 / 628
页数:4
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