Unveiling the plasma wave in the channel of graphene field-effect transistor

被引：0

作者：

Soltani, A. ^{[1
]}

Kuschewski, F. ^{[2
]}

Bonmann, M. ^{[3
]}

Generalov, A. ^{[4
]}

Vorobiev, A. ^{[3
]}

Ludwig, F. ^{[1
]}

Wiecha, M. ^{[1
]}

Cibiraite, D. ^{[1
]}

Walla, F. ^{[1
]}

Kehr, S. C. ^{[2
]}

Eng, L. M. ^{[2
]}

Stake, J. ^{[3
]}

Roskos, H. G. ^{[1
]}

机构：

[1] Goethe Univ, Inst Phys, Frankfurt, Germany

[2] Univ Technol, Inst Appl Phys, Dresden, Germany

[3] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Gothenburg, Sweden

[4] Aalto Univ, Dept Elect & Nanoengn, Tietotie 3, Espoo 02150, Finland

来源：

2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2019年

关键词：

D O I：

10.1109/irmmw-thz.2019.8873874

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Coupling an electromagnetic wave at GHz to THz frequencies into the channel of a graphene field-effect transistor (GFET) provokes collective charge carrier oscillations of the two-dimensional electron gas (2DEG) known as plasma waves. Here, we report the very first experimental and direct mapping of the electric field distribution in a gated GFET at nanometer length scales using scattering-type scanning near-field microscopy (s-SNOM) at 2 THz. Based on the experimental results we deduce the plasma wave velocity for different gate bias voltages, which is in good agreement with the theoretical prediction.

引用

页数：1

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