The regimes of charge transport in CeB6

被引:4
|
作者
Ignatov, M. I.
Bogach, A. V.
Glushkov, V. V.
Demishev, S. V.
Paderno, Yu. B.
Shitsevalova, N. Yu.
Sluchanko, N. E.
机构
[1] RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
[3] Ukrainian Acad Sci, Inst Problems Mat Sci, UA-252680 Kiev, Ukraine
基金
俄罗斯基础研究基金会;
关键词
Kondo lattice; charge transport;
D O I
10.1016/j.physb.2006.01.284
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A detailed study of resistivity (p), Hall (RH) and Seebeck (S) coefficients for high-quality single crystals of CeB6 has been carried out in a wide range of temperatures 1.8-300K. An anomalous behavior of all transport characteristics (p, RH, S) was found in the vicinity of T*approximate to 80K for a first time. The strong increase of resistivity p which follows to a weak localization relation p similar to T-1/eta (critical index 1/eta = 0.39 +/- 0.02) in the interval 7-80 K as well as an unusual asymptotic behavior of Seebeck coefficient S(T)similar or equal to Ig T and the pronounced (similar to 3 times) reduction of the Hall mobility mu(H) values observed below T* allowed us to conclude in favor of crossover between different regimes of charge carriers transport in CeB6 at T*. The low temperature anomalies of the charge transport characteristics are compared with the predictions of the Kondo-lattice model. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:780 / 781
页数:2
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