Potential efficiency improvement of Cu (In, Ga) Se2 thin-film solar cells by the window layer optimization

被引：31
|
作者：
Gharibshahian, Iman [1 ]
Sharbati, Samaneh [1 ]
Orouji, Ali A. [1 ]
机构：
[1] Semnan Univ, Dept Elect & Comp Engn, Semnan 3513119111, CO, Iran
来源：
THIN SOLID FILMS | 2018年 / 655卷
关键词：
Copper indium gallium selinide; Thin-film solar cells; Window layer; Zinc oxysulfide; Zinc magnesium oxide; BUFFER LAYER; BAND-OFFSET; PERFORMANCE; RECOMBINATION; ZN1-XMGXO; ALLOYS;
D O I：
10.1016/j.tsf.2018.04.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, an initial model based on a CIGS experimental device has been established. Afterwards, the conventional i-ZnO layer replaced by ZnO1_S-x(x) or Zn1-yMgyO layers as window layer and the solar cell performance analyzed. The estimated optical bandgap (Eg) of Zn1-yMgyO material is linearly enhanced from 3.3 eV for pure ZnO to 4.1 eV for Zn0.6Mg0.4O. Also, Eg for ZnO1-xSx material is variable between 2.83 eV-3.76 eV that is wider than pure ZnO. The AlZnO/ZnO1-xSx/CdS/CIGS structure when 0.4 < x < 0.6 and the AlZnO/Zn1-yMgyO/CdS/CIGS structure when 0.055 < y < 0.2 are the proposed solar cells with 21.15% efficiency.
引用
收藏
页码：95 / 104
页数：10
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