Effects of Sr2+ substitution on the crystal structure, Raman spectra, bond valence and microwave dielectric properties of Ba3-xSrx(VO4)2 solid solutions

被引:65
|
作者
Cheng, Kai [1 ,3 ]
Li, Chunchun [1 ,2 ]
Yin, Changzhi [1 ]
Tang, Ying [1 ]
Sun, Yihua [3 ]
Fang, Liang [1 ,3 ]
机构
[1] Guilin Univ Technol, State Key Lab Breeding Base Nonferrous Met & Spec, Guangxi Univ Key Lab Nonferrous Met Oxide Elect F, Coll Mat Sci & Engn, Guilin 541004, Peoples R China
[2] Guilin Univ Technol, Coll Informat Sci & Engn, Guilin 541004, Peoples R China
[3] China Three Gorges Univ, Key Lab Inorgan Nonmetall Crystalline & Energy Co, Coll Mat & Chem Engn, Yichang 443002, Peoples R China
关键词
Ceramics; Dielectric properties; Microwave resonance; Composites; TEMPERATURE-COEFFICIENT; CERAMICS; LTCC; CA;
D O I
10.1016/j.jeurceramsoc.2019.05.030
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effects of Sr2+ substitution for Ba2+ on microwave dielectric properties and crystal structure of Ba3-xSrx(VO4)(2) (0 <= x <= 3, BSVO) solid solution were investigated. Such Sr2+ substitution contributes to significant reduction in sintering temperature from 1400 degrees C to 1150 degrees C. Both permittivity (Sigma(r)) and quality factor (Q x f) values decreased with increasing x value, which was determined to be related with the descending values of average polarizability and packing fraction, whereas the increase in tau(f) value was explained by the decreased average V-O bond length, A-site bond valence. BSVO ceramics possessed encouraging dielectric performances with Sigma(r) = 12.2-15.6 +/- 0.1, Q x f = 44,340 - 62,000 +/- 800 GHz, and tau(f) = 24.5-64.5 +/- 0.2 ppm/degrees C. Low-temperature sintering was manipulated by adding B2O3 as sintering additive for the representative Sr3V2O8 (SVO) ceramic and only 1 wt.% B2O3 addition successfully contributed to a 21.7% decrease in sintering temperature to 900 degrees C, showing good chemical compatibility with silver electrodes, which render BSVO series and SVO ceramics potential candidates in multilayer electronic devices fabrication.
引用
收藏
页码:3738 / 3743
页数:6
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