Blocking Characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

被引：20

作者：

Wada, Keiji ^{[1
]}

Uchida, Kosuke ^{[1
]}

Kimura, Ren ^{[1
]}

Sakai, Mitsuhiko ^{[1
]}

Hatsukawa, Satoshi ^{[1
]}

Hiratsuka, Kenji ^{[1
]}

Hirakata, Noriyuki ^{[1
]}

Mikamura, Yasuki ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Konohana Ku, Osaka 5540024, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

MOSEFET; high voltage; edge termination; field-limiting ring;

D O I：

10.4028/www.scientific.net/MSF.778-780.915

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Blocking characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with various doping conditions for the edge termination region have been investigated. By optimizing the implanted dose into the edge termination structure consisting of junction termination extension (JTE) and field-limiting ring (FLR), a breakdown voltage of 3,850 V for 3.3 kV -class MOSFET has been attained. This result approximately corresponds to 95% of the parallel-plane breakdown voltage estimated from the doping concentration and the thickness of the epitaxial layer. Implanted doping for the JFET region is effective in reducing JFET resistance, resulting in the specific on-resistance of 14.2 m Omega cm(2) for 3.3 kV SiC MOSFETs. Switching characteristics at the high drain voltage of 2.0 kV are also discussed.

引用

页码：915 / 918

页数：4

共 50 条

[1] Edge Termination Structures for 3.3 kV 4H-SiC Devices
Dong, Bi-Fan
Lee, Kung-Yen
Lai, Yun-Kai
Tzou, Chen-Dong
Hsu, Chih-Chao
Chen, Yi-Ting
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2020,
[2] Edge termination strategies for a 4 kV 4H-SiC thyristor
Brosselard, P.
Planson, D.
Scharnholz, S.
Raynaud, C.
Zorngiebel, V.
Lazar, M.
Chante, J. -P.
Spahn, E.
SOLID-STATE ELECTRONICS, 2006, 50 (7-8) : 1183 - 1188
[3] 3.3 kV 4H-SiC JBS diodes with single-zone JTE termination
Pan, Yan
Tian, Liang
Wu, Hao
Li, Yongping
Yang, Fei
MICROELECTRONIC ENGINEERING, 2017, 181 : 10 - 15
[4] Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs
Song, Qing-Wen
Tang, Xiao-Yan
Yuan, Hao
Wang, Yue-Hu
Zhang, Yi-Meng
Guo, Hui
Jia, Ren-Xu
Lv, Hong-Liang
Zhang, Yi-Men
Zhang, Yu-Ming
CHINESE PHYSICS B, 2016, 25 (04)
[5] The Optimization of 3.3 kV 4H-SiC JBS Diodes
Renz, Arne Benjamin
Shah, Vishal Ajit
Vavasour, Oliver James
Baker, Guy William Clarke
Bonyadi, Yegi
Sharma, Yogesh
Pathirana, Vasantha
Trajkovic, Tanya
Mawby, Phil
Antoniou, Marina
Gammon, Peter Michael
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (01) : 298 - 303
[6] Design and fabrication of a 3.3 kV 4H-SiC MOSFET
Huang Runhua
Tao Yonghong
Bai Song
Chen Gang
Wang Ling
Liu Ao
Wei Neng
Li Yun
Zhao Zhifei
JOURNAL OF SEMICONDUCTORS, 2015, 36 (09)
[7] Edge termination design improvements for 10 kV 4H-SiC bipolar diodes
Nguyen, D. M.
Huang, R.
Phung, L. V.
Planson, D.
Berthou, M.
Godignon, P.
Vergne, B.
Brosselard, P.
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 609 - +
[8] Edge Termination Design with Strong Process Robustness for 1.2 kV-class 4H-SiC Super Junction V-groove MOSFETs
Masuda, Takeyoshi
Hatayama, Tomoaki
Harada, Shinsuke
Saitou, Yu
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020), 2020, : 166 - 169
[9] 3.3 kV-10A 4H-SiC PiN diodes
Brosselard, Pierre
Camara, Nicolas
Hassan, Jawad
Jorda, Xavier
Bergman, Peder
Montserrat, Josep
Millan, Jose
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 991 - +
[10] Breakdown Characteristics of 12-20 kV-class 4H-SiC PiN Diodes with Improved Junction Termination Structures
Niwa, Hiroki
Feng, Gan
Suda, Jun
Kimoto, Tsunenobu
2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2012, : 381 - 384

← 1 2 3 4 5 →