Design for ASIC reliability for low-temperature applications

被引：6
|
作者：
Chen, Yuan
Westergard, Lynett
Mojarradi, Mohammad M.
Johnson, Travis W.
Cozy, Raymond Scott
Billman, Curtis
Burke, Gary R.
Kolawa, Elizabeth A.
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] AMI Semicond, Pocatello, ID 83201 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2006年 / 6卷 / 02期
关键词：
circuit reliability; device reliability; hot carrier aging (HCA); low-temperature electronics;
D O I：
10.1109/TDMR.2006.876590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A design for reliability methodology has been developed for electronics for low-temperature applications. A hot carrier aging (HCA) lifetime projection model is proposed to take into account the HCA impact on technology, analysis of parametric degradation versus critical circuit path degradation, transistor bias profile, transistor substrate current profile, and operating temperature profile. The most applicable transistor size can, be determined in order to meet the reliability requirements of the electronics operating under low temperatures. This methodology and approach can also be applied to other transistor-level failure and/or degradation mechanisms for applications with varying temperature ranges.
引用
收藏
页码：146 / 153
页数：8
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