Investigating a Novel Normally-On AlGaN/GaN Capped PHEMT and the Effects of Cap Layers Thickness on its Gate Leakage Current

被引：0

作者：

Ghafouri, Tara ^{[1
]}

Salehi, Alireza ^{[1
]}

Mahmoodnia, Hedie ^{[1
]}

机构：

[1] KN Toosi Univ Technol, Dept Elect Engn, Tehran 1631714191, Iran

来源：

26TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE 2018) | 2018年

关键词：

AlGaN/GaN capped PHEMT; In0.15Ga0.85N layer; spacer layer; I-on/I-off ratio;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the effects of cap layers thickness in the AlGaN/GaN capped pseudomorphic high electron mobility transistor (PHEMT) are investigated using Atlas/Silvaco Simulator. The proposed structure improves the prior AlGaN/GaN capped HEMT reported in the literature by insertion of an In0.15Ga0.85N layer between the AlN spacer and the GaN buffer layers and optimization of the different layers dimensions, in order to minimize gate leakage current. Simulation results demonstrate a gate leakage current of 10(-14) (A) and an I-on/I-off of higher than 11 orders of magnitude, so that it is 3 orders of magnitude higher than that of the prior non-optimal structure.

引用

页码：305 / 310

页数：6

共 17 条

[1] Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs
Sarkar, Arghyadeep
Haddara, Yaser M.
SOLID-STATE ELECTRONICS, 2022, 196
[2] Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs
Turuvekere, Sreenidhi
DasGupta, Amitava
DasGupta, Nandita
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) : 3449 - 3452
[3] Simulation of Gate Leakage Current of AlGaN/GaN HEMTs: Effects of the Gate Edges and Self-Heating
Wang, Ashu
Zeng, Lingyan
Wang, Wen
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (11) : S3025 - S3029
[4] DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs
Rodriguez, Raul
Gonzalez, Benito
Garcia, Javier
Toulon, Gaetan
Morancho, Frederic
Nunez, Antonio
ELECTRONICS, 2018, 7 (10)
[5] T-CAD simulations study on drain leakage current and its correlation with gate current for AlGaN/GaN HEMTs
Miccoli, Cristina
Cerantonio, Viviana
Chini, Alessandro
Iucolano, Ferdinando
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 255 - 258
[6] Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors
Gao, Y.
Sasangka, W. A.
Thompson, C. V.
Gan, C. L.
MICROELECTRONICS RELIABILITY, 2019, 100
[7] On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors
Arulkumaran, S
Egawa, T
Selvaraj, L
Ishikawa, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L220 - L223
[8] On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors
Arulkumaran, Subramaniam
Egawa, Takashi
Selvaraj, Lawrence
Ishikawa, Hiroyasu
Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (8-11):
[9] Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
Kurt, Gokhan
Gulseren, Melisa Ekin
Ghobadi, Turkan Gamze Ulusoy
Ural, Sertac
Kayal, Omer Ahmet
Ozturk, Mustafa
Butun, Bayram
Kabak, Mehmet
Ozbay, Ekmel
SOLID-STATE ELECTRONICS, 2019, 158 : 22 - 27
[10] Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current
Du, Jiyao
Pu, Taofei
Li, Xiaobo
Li, Liuan
Ao, Jin-Ping
Gao, Hongwei
JOURNAL OF CRYSTAL GROWTH, 2023, 611

← 1 2 →