Direct observation of Si lattice strain and its distribution in the Si(001)-SiO2 interface transition layer

被引：65
|
作者：
Kim, YP
Choi, SK
Kim, HK
Moon, DW
机构：
[1] KOREA ADV INST SCI & TECHNOL,DEPT MAT SCI & ENGN,TAEJON 305701,SOUTH KOREA
[2] KOREA INST STAND & SCI,SURFACE ANAL GRP,TAEJON 305606,SOUTH KOREA
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 24期
关键词：
D O I：
10.1063/1.120373
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In the transition layer of the Si(001)-SiO2 interface, Si lattice strain and its distribution were directly observed by medium energy ion scattering spectroscopy for thermal and ion beam oxides. The strain was in the vertical direction, and the maximum values at the SiO2 side of the transition layer were 0.96% and 2.8% for the thermal and ion beam oxides, respectively. (C) 1997 American Institute of Physics. [S0003-6951(97)00750-X].
引用
收藏
页码：3504 / 3506
页数：3
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