Growth of Copper Telluride Thin Films using Electrodeposition

被引：0

作者：

Jeyakumar, P. ^{[1
,2
]}

Thanikaikarasan, S. ^{[2
]}

Natarajan, B. ^{[1
]}

Mahalingam, T. ^{[3
]}

Ixtlilco, Luis ^{[4
]}

机构：

[1] Raja Dorai Singam Govt Arts Coll, Post Grad & Res Dept Phys, Sivagangai 630561, Tamil Nadu, India

[2] PSN Coll Engn & Technol, Sch Basic Engn & Sci, Ctr Sci & Appl Res, Tirunelveli 627152, Tamil Nadu, India

[3] Alagappa Univ, Dept Phys, Karaikkudi 630004, Tamil Nadu, India

[4] Univ Politecn Estado Guerrero, Taxco, Guerrero, Mexico

来源：

JOURNAL OF NEW MATERIALS FOR ELECTROCHEMICAL SYSTEMS | 2018年 / 21卷 / 01期

关键词：

Copper Telluride; Cyclic voltammetry; SnO2; Optical absorption analysis; ELECTRICAL-PROPERTIES; DEPOSITION; CU2TE;

D O I：

10.14447/jnmes.v21i1.516

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Copper Telluride thin films have been prepared on Fluorine doped Tin Oxide coated conducting glass substrates using electro-deposition technique. Cyclic voltammetric analysis has been carried out to analyze the growth mechanism of the deposited films. Thickness value of the deposited films has been estimated using Stylus profilometry. X-ray diffraction pattern revealed that the prepared films possess polycrystalline in nature. Microstructural parameters such as crystallite size, strain and dislocation density are evaluated using observed X-ray diffraction data. Optical absorption analysis showed that the prepared films are found to exhibit band gap value around 2.03 eV.

引用

页码：15 / 19

页数：5

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