Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si+ ion implantation

被引：10
|
作者：
Normand, P
Tsoukalas, D
Kapetanakis, E
VandenBerg, JA
Armour, DG
Stoemenos, J
机构：
[1] Institute of Microelectronics, NCSR 'Demokritos'
[2] Physics Dept., University of Salford
[3] Physics Dept., University of Thessaloniki
来源：
MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(97)00019-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as de current measurements.
引用
收藏
页码：79 / 82
页数：4
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