Characterization of hydrogen in hydrogenated nano-crystalline silicon

被引：4

作者：

Yamamoto, K ^{[1
]}

Itoh, T ^{[1
]}

Ushikoshi, K ^{[1
]}

Nonomura, S ^{[1
]}

Nitta, S ^{[1
]}

机构：

[1] Gifu Univ, Dept Elect Engn, Gifu 5011193, Japan

来源：

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷

关键词：

D O I：

10.1557/PROC-557-317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tbe characterization of hydrogen in hydrogenated nano-crystalline silicon (nc-Si:H) films with various crystallinity has been studied using FTIR absorption spectroscopy and gas effusion spectroscopy. In gas effusion spectrum of a nc-Si:H, three evolution peaks of H-2 are found near 400, 500 and 600 degrees C. From the deconvolution of the gas effusion spectra, the hydrogen concentration in amorphous region dose not depend on the volume fraction of crystalline. The surface density of hydrogen at the interface and in the grain boundaries of nano-crystalline grains decreases with the volume fraction of crystalline. The properties of hydrogen in nc-Si:H films are discussed with the results of FTIR absorption spectroscopy.

引用

页码：317 / 322

页数：6

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