On strain and scattering in deeply-scaled n-channel MOSFETs: a quantum-corrected semiclassical Monte Carlo analysis

A model of valley-dependent quantum-confinement-enhanced scattering for electrons has added to the existing quantum corrections in our full band Monte Carlo simulator, Monte Carlo of the University of Texas (MCUT). The simulator was then calibrated to fit channel mobility curves, both strained and unstrained, by adjusting surface roughness parameters. After testing different strain & surface orientation combinations, we find that, in order, uniaxial tensile [110] and biaxial tensile (001) strain with [110] channel orientations in each case represent the optimal scenarios for electron transport. A decreasing advantage of strain with down-scaling is exhibited. Significantly, we find unexpected benefits and limitations of strain, as well as limitations on the use of mobility or even thermal velocity for predicting these effects.