The dependence of the Schottky barrier height on carbon nanotube diameter for Pd-carbon nanotube contacts

被引：39

作者：

Svensson, Johannes ^{[1
]}

Sourab, Abdelrahim A. ^{[1
]}

Tarakanov, Yury ^{[2
]}

Lee, Dong Su ^{[3
]}

Park, Seung Joo ^{[4
,5
]}

Baek, Seung Jae ^{[4
,5
]}

Park, Yung Woo ^{[4
,5
]}

Campbell, Eleanor E. B. ^{[1
,6
]}

机构：

[1] Univ Gothenburg, Dept Phys, SE-41296 Gothenburg, Sweden

[2] Chalmers, Dept Appl Phys, SE-41296 Gothenburg, Sweden

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[4] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[5] Seoul Natl Univ, Natl Core Res Ctr, Nano Syst Inst, Seoul 151747, South Korea

[6] Univ Edinburgh, Sch Chem, Edinburgh EH9 3JJ, Midlothian, Scotland

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 17期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; WORK FUNCTION; THERMIONIC EMISSION; METAL;

D O I：

10.1088/0957-4484/20/17/175204

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotube devices contacted with Pd electrodes. The SB barrier heights were determined from the activation energy of the temperature-dependent thermionic emission current in the off-state of the devices. The barrier heights generally decrease with increasing diameter of the nanotubes and they are in agreement with the values expected when assuming little or no influence of Fermi level pinning.

引用

页数：5

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