A Non-Destructive Technique Using 3D X-ray Computed Tomography to Reveal Semiconductor Internal Physical Defects

被引：0

作者：

Tan, C. H. ^{[1
]}

Lau, C. K. ^{[1
]}

机构：

[1] Infineon Technol Malaysia Sdn Bhd, Melaka 75350, Malaysia

来源：

2013 IEEE INTERNATIONAL CONFERENCE ON SIGNAL AND IMAGE PROCESSING APPLICATIONS (IEEE ICSIPA 2013) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses on the application of 3D X-ray Computed Tomography (CT) to precisely detect and confirm semiconductor internal physical defects without the need to decapsulate the sample. Equipped with advanced technologies and innovations, today's X-ray machine is capable of reconstructing the two-dimension (2D) sliced images to form 3D images and videos in much shorter time. With the introduction of 3D X-ray CT designed for electronics field, failure mechanisms once only visible after destructive analysis can now be revealed in non-destructive way. The technique not only saves cost, it shortens the turnaround time tremendously and allows customer's response and relevant improvement actions to be taken more efficiently.

引用

页码：55 / 60

页数：6

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