Steady state current-voltage characteristics of 4H-SiC thyristors at high and superhigh current densities

被引：11
|
作者：
Levinshtein, ME [1 ]
Palmour, JW [1 ]
Rumyantsev, SL [1 ]
Singh, R [1 ]
机构：
[1] CREE RES INC,DURHAM,NC 27713
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 11期
关键词：
D O I：
10.1088/0268-1242/12/11/029
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage characteristics of 4H-SiC thyristors with a blocking voltage of 400 V have been measured up to a current density j similar or equal to 7 x 10(4) A cm(-2) in the temperature range 300-600 K. The voltage drop across the thyristors was found to be significantly less than the drop across 6H-SiC thyristors with a blocking voltage of 100 V reported earlier. At a current density j > (5-10) x 10(3) A cm(-2) the contact resistance gives the main contribution to the voltage drop in 4H-SiC thyristors.
引用
收藏
页码：1498 / 1499
页数：2
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