SiO2 etching in high-density plasmas: Differences with low-density plasmas

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作者：
Oehrlein, GS
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来源：
PLASMA PROCESSING OF SEMICONDUCTORS | 1997年 / 336卷
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：73 / 88
页数：16
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