共 50 条
- [1] Electrical properties of the La2O3/4H-SiC interface prepared by atomic layer deposition using La(iPrCP)3 and H2O SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1083 - +
- [6] Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition Journal of Materials Research, 2010, 25 : 1898 - 1903
- [9] Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition Journal of Materials Science: Materials in Electronics, 2016, 27 : 8550 - 8558