In situ infrared spectroscopy during La2O3 atomic layer deposition using La(iPrCp)3 and H2O

被引:3
|
作者
Sperling, Brent A. [1 ]
Maslar, James E. [1 ]
Ivanov, Sergei V. [2 ]
机构
[1] NIST, 100 Bur Dr, Gaithersburg, MD 20899 USA
[2] Versum Mat, 7201 Hamilton Blvd, Allentown, PA 18195 USA
来源
关键词
OXIDE THIN-FILMS; LANTHANUM OXIDE; GATE OXIDES; VIBRATIONAL SPECTROSCOPY; EMISSION SPECTROSCOPY; ELECTRICAL-PROPERTIES; DEHYDROXYLATION; PRECURSOR; SPECTRA; POWDERS;
D O I
10.1116/1.5026488
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Infrared spectra of surface species have been obtained during atomic layer deposition using tris(isopropylcyclopentadienyl) lanthanum, La((PrCp)-Pr-i)(3), and water as precursors at 160 and 350 degrees C. Gas-phase spectra of La((PrCp)-Pr-i)(3) are obtained for comparison. At low temperature, ligand exchange is seen to occur, and carbonate formation is found. With extended purging, the organic ligands are found to be stable on the surface, and carbonates are not formed. These observations indicate that carbonate formation is occurring during exposure to the precursors. At high temperature, the La precursor is observed to decompose leaving an opaque deposit containing relatively little hydrogen.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Electrical properties of the La2O3/4H-SiC interface prepared by atomic layer deposition using La(iPrCP)3 and H2O
    Moon, Jeong Hyun
    Il Eom, Da
    No, Sang Yong
    Song, Ho Keun
    Yim, Jeong Hyuk
    Na, Hoon Joo
    Lee, Jae Bin
    Kim, Hyeong Joon
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1083 - +
  • [2] Deposition characteristics and annealing effect of La2O3 films prepared using La(iPrCp)3 precursor
    Eom, Dail
    No, Sang Yong
    Hwang, Cheol Seong
    Kim, Hyeong Joon
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (03) : G49 - G53
  • [3] Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O
    Adelmann, Christoph
    Pierreux, Dieter
    Swerts, Johan
    Dewulf, Dann
    Hardy, An
    Tielens, Hilde
    Franquet, Alexis
    Brijs, Bert
    Moussa, Alain
    Conard, Thierry
    Van Bael, Marlies K.
    Maes, Jan W.
    Jurczak, Malgorzata
    Kittl, Jorge A.
    Van Elshocht, Sven
    CHEMICAL VAPOR DEPOSITION, 2010, 16 (4-6) : 170 - 178
  • [4] Atomic Layer Deposition of La2O3 Film with Precursor La(thd)3-DMEA
    Zhao, Wenyong
    Jiang, Jie
    Luo, Yawen
    Li, Jiahao
    Ding, Yuqiang
    COATINGS, 2023, 13 (05)
  • [5] Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O
    Han, Jeong Hwan
    Nyns, Laura
    Delabie, Annelies
    Franquet, Alexis
    Van Elshocht, Sven
    Adelmann, Christoph
    CHEMISTRY OF MATERIALS, 2014, 26 (03) : 1404 - 1412
  • [6] Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
    Yongchan Kim
    Sanghyun Woo
    Hyungchul Kim
    Jaesang Lee
    Honggyu Kim
    Hyerin Lee
    Hyeongtag Jeon
    Journal of Materials Research, 2010, 25 : 1898 - 1903
  • [7] Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
    Kim, Yongchan
    Woo, Sanghyun
    Kim, Hyungchul
    Lee, Jaesang
    Kim, Honggyu
    Lee, Hyerin
    Jeona, Hyeongtag
    JOURNAL OF MATERIALS RESEARCH, 2010, 25 (10) : 1898 - 1903
  • [8] Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition
    Fei, Chenxi
    Liu, Hongxia
    Wang, Xing
    Zhao, Dongdong
    Wang, Shulong
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (08) : 8550 - 8558
  • [9] Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition
    Chenxi Fei
    Hongxia Liu
    Xing Wang
    Dongdong Zhao
    Shulong Wang
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 8550 - 8558
  • [10] Characteristics of La2O3 Thin Films Deposited Using the ECR Atomic Layer Deposition Method
    Kim, Woong-Sun
    Park, Sang-Kyun
    Moon, Dae-Yong
    Kang, Byoung-Woo
    Kim, Heon-Do
    Park, Jong-Wan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (02) : 590 - 593