Pure spin current transport in a SiGe alloy

被引：17

作者：

Naito, Takahiro ^{[1
]}

Yamada, Michihiro ^{[1
]}

Tsukahara, Makoto ^{[1
]}

Yamada, Shinya ^{[1
,2
]}

Sawano, Kentarou ^{[3
]}

Hamaya, Kohei ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Ctr Spintron Res Network, Toyonaka, Osaka 5608531, Japan

[3] Tokyo City Univ, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 05期

关键词：

ELECTRICAL DETECTION; STRAINED-SI; SILICON; GERMANIUM; MOBILITY; DEVICES; HETEROSTRUCTURES;

D O I：

10.7567/APEX.11.053006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si0.1Ge0.9, we study pure spin current transport in a degenerate SiGe alloy (n similar to 5.0 x 10(18) cm(-3)). Clear nonlocal spin-valve signals and Hanle effect curves, indicating generation, transport, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si0.1Ge0.9 layer at low temperatures are reliably estimated to be similar to 0.5 mu m and similar to 0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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