Photoinduced anomalous Hall and nonlinear Hall effect in borophene

被引：12
|
作者：
Li, Jing [1 ]
Xu, Tian [1 ]
Zhu, Guo-Bao [2 ]
Pan, Hui [1 ]
机构：
[1] Beihang Univ, Dept Phys, Beijing 100191, Peoples R China
[2] Heze Univ, Dept Phys & Elect Engn, Heze 274015, Shandong, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2020年 / 322卷
基金：
北京市自然科学基金;
关键词：
Floquet theory; Nonlinear Hall effect; Borophene; ELECTRONIC-PROPERTIES; DISCOVERY; SEMIMETAL; LAYER;
D O I：
10.1016/j.ssc.2020.114092
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, we study the influence of periodically driven circularly polarized light on the band structure and transport properties of borophene at high frequency limit. We predict the topological phase transition of borophene from Dirac semimetal to Floquet topological insulator under circularly polarized light by analyzing the anomalous Hall conductance and Chern number. Moreover, due to the inversion asymmetric of borophene, we find a significant nonlinear Hall signal near the tilted Dirac cone and compute the dipole moment of Berry curvature. Our results provide a new method to study the transport properties of borophene.
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收藏
页数：5
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