Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode

被引：12

作者：

Bayhan, Habibe ^{[1
]}

Ozden, Sadan ^{[1
]}

机构：

[1] Univ Mugla, Fac Art & Sci, Dept Phys, TR-48000 Mugla, Turkey

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 9-10期

关键词：

BPW34; p-i-n; current transport;

D O I：

10.1016/j.sse.2006.08.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to the p/i interface plays a significant role in the dark forward current. We show that Bardeen's model for a modified Schottky-like interfacial junction can be satisfactorily applied to describe the reverse current-voltage characteristics at intermediate bias voltages. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1563 / 1566

页数：4

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