The effect of neutron irradiation on the microhardness of gallium arsenide

被引：0
|
作者：
Jibuti, ZV [1 ]
Dolidze, ND [1 ]
Sikhuashvili, N [1 ]
Eristavi, GL [1 ]
机构：
[1] Tbilisi State Univ, GE-380086 Tbilisi, Georgia
来源：
TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 09期
关键词：
Radiation; Radiation Dose; Gallium; Dose Range; Arsenide;
D O I：
10.1134/1.1804578
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the effect of neutron irradiation on the microhardness of n-GaAs crystals. It is shown that the growth and saturation of microhardness with increasing radiation dose Phi, as previously reported in the literature, take place only in the dose range Phi similar to 10(15)-5 x 10(16) cm(-2). As the neutron dose is increased further, the microhardness continues to grow due to the increasing role of the radiation-induced disordered regions in n-GaAs. (C) 2004 MAIK "Nauka / Interperiodica".
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页码：730 / 731
页数：2
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