DC and AC models of partially-depleted SOI MOSFETs in weak inversion

被引：0
|
作者：
Tomaszewski, D [1 ]
Domanski, K [1 ]
Lukasiak, L [1 ]
Zareba, A [1 ]
Gibki, J [1 ]
Jakubowski, A [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
PROGRESS IN SOI STRUCTURES AND DEVICES OPERATING AT EXTREME CONDITIONS | 2002年 / 58卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：289 / 298
页数：10
相关论文
共 50 条
  • [1] On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs
    Wang, Sheng-Chun
    Su, Pin
    Chen, Kun-Ming
    Lin, Chien-Ting
    Liang, Victor
    Huang, Guo-Wei
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (05) : 364 - 366
  • [2] SIMULATION OF THE TRANSIENT CHARACTERISTICS OF PARTIALLY-DEPLETED AND FULLY-DEPLETED SOI MOSFETS
    TAI, GC
    KORMAN, CE
    MAYERGOYZ, ID
    SOLID-STATE ELECTRONICS, 1994, 37 (07) : 1387 - 1394
  • [3] A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs
    Rengel, R
    Martín, MJ
    Dambrine, G
    Danneville, F
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (03) : 273 - 278
  • [4] Effects of channel and source/drain implants on partially-depleted SOI MOSFETs
    Cao, M
    Voorde, PV
    Diaz, C
    Greene, W
    1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 98 - 99
  • [5] TRANSIENT-BEHAVIOR OF THE KINK EFFECT IN PARTIALLY-DEPLETED SOI MOSFETS
    WEI, A
    SHERONY, MJ
    ANTONIADIS, DA
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (11) : 494 - 496
  • [6] Junction influence on drain current transients in partially-depleted SOI MOSFETs
    Ionescu, AM
    Chovet, A
    Chaudier, F
    ELECTRONICS LETTERS, 1997, 33 (20) : 1740 - 1742
  • [7] Back-gate induced noise overshoot in partially-depleted SOI MOSFETs
    Lukyanchikova, N
    Garbar, N
    Smolanka, A
    Simoen, E
    Claeys, C
    Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, 2005, 185 : 255 - 260
  • [8] Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs
    Peng, Chao
    En, Yunfei
    Zhang, Zhengxuan
    Liu, Yuan
    Lei, Zhifeng
    MICROELECTRONICS RELIABILITY, 2017, 75 : 135 - 141
  • [9] Analytical modeling of the partially-depleted SOI MOSFET
    Hammad, MY
    Schroder, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (02) : 252 - 258
  • [10] Statistical characterization of partially-depleted SOI gates
    Kim, Kyung Ki
    Kim, Yong-Bin
    Park, N.
    Lombardi, F.
    2006 IEEE INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE PROCEEDINGS, VOLS 1-5, 2006, : 245 - +
12345