Record-High-Q Microresonators from 650 nm to 1550 nm Wavelengths on a 3C-SiC-on-Insulator Platform

被引：0
|
作者：
Fan, Tianren [1 ]
Wu, Xi [1 ]
Eftekhar, Ali A. [1 ]
Adibi, Ali [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, 778 Atlantic Dr, Atlanta, GA 30332 USA
来源：
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2019年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report record-high-Q SiC microresonators on a 3C-SiC-on-insulator platform with ultra-low (similar to 1.4 angstrom) roughness after chemical-mechanical polishing. We demonstrate Qs of 242,000 at 1550 nm, 112,000 at 780 nm, and 83,000 at 650 nm. (c) 2019 The Author(s)
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