GaSb: Surface tension and floating-zone growth

被引：16
|
作者：
Tegetmeier, A [1 ]
Croll, A [1 ]
Danilewsky, A [1 ]
Benz, KW [1 ]
机构：
[1] UNIV FREIBURG,INST KRISTALLOG,D-79104 FREIBURG,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(96)00134-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The dependence of the surface tension of GaxSb1-x melts on stoichiometry and temperature was measured using the sessile drop technique. A method of determining surface tension directly from pictures of the floating-zone growth process was used. The growth angle of GaSb was measured under 1g and compared to mu g results. An estimation of the critical Marangoni number is given.
引用
收藏
页码：651 / 656
页数：6
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