Vacancy-oxygen defects in silicon: the impact of isovalent doping

被引：20
|
作者：
Londos, C. A. [1 ]
Sgourou, E. N. [1 ]
Hall, D. [2 ]
Chroneos, A. [3 ,4 ]
机构：
[1] Univ Athens, Dept Phys, Solid State Sect, Zografos 15784, Greece
[2] Open Univ, Dept Phys Sci, Milton Keynes MK7 6AA, Bucks, England
[3] Open Univ, Milton Keynes MK7 6AA, Bucks, England
[4] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2014年 / 25卷 / 06期
关键词：
CHARGE-TRANSFER INEFFICIENCY; RADIATION-INDUCED DEFECTS; IRRADIATION-INDUCED DEFECTS; HUBBLE-SPACE-TELESCOPE; N-TYPE SILICON; CZOCHRALSKI SILICON; ELECTRON-IRRADIATION; THERMAL DONORS; ENGINEERING STRATEGIES; INTERSTITIAL OXYGEN;
D O I：
10.1007/s10854-014-1947-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.
引用
收藏
页码：2395 / 2410
页数：16
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