Study of the GaAs, AlGaAs MBE growth dynamics

被引：0
|
作者：
Chen, YD [1 ]
Liu, XQ
Lu, W
Qiao, YM
Wang, XR
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Jilin Univ, Dept Elect Engn, Changchun 130023, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2000年 / 19卷 / 01期
关键词：
MBE; RHEED; real-rime monitoring; GaAs; AlGaAs;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The intensity oscillations in the various beams in RHEED pattern were observed during MBE growth of GaAs and AlGaAs. The two-dimensional layer-by-layer mode was used to analyze the experiment results and (00),(01) beams intensity oscillations were attributed to the periodic variations of the surface roughness. The existence of the various fractional-order beams indicated that the reconstructed surface existed on the GaAs (001) substrate surface during growth in the present growing conditions, their intensity oscillations were attributed to the reconstruction periodic variations on the two-dimensional island surface.
引用
收藏
页码：67 / 70
页数：4
相关论文
共 10 条
  • [1] EXISTENCE OF METASTABLE STEP DENSITY DISTRIBUTIONS ON GAAS(100) SURFACES AND THEIR CONSEQUENCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH
    CHEN, P
    MADHUKAR, A
    KIM, JY
    LEE, TC
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 650 - 652
  • [2] GROWTH-KINETICS AND STEP DENSITY IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY
    CLARKE, S
    VVEDENSKY, DD
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2272 - 2283
  • [3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY
    FARRELL, HH
    PALMSTROM, CJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 903 - 907
  • [4] INSITU SCANNING TUNNELING MICROSCOPY OBSERVATION OF SURFACE-MORPHOLOGY OF GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY
    HELLER, EJ
    LAGALLY, MG
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2675 - 2677
  • [5] A RHEED STUDY OF THE DYNAMICS OF GAAS AND ALGAAS GROWTH ON A (001) SURFACE BY MBE
    HOPKINS, J
    LEYS, MR
    BRUBACH, J
    VANDERVLEUTEN, WC
    WOLTER, JH
    [J]. APPLIED SURFACE SCIENCE, 1995, 84 (03) : 299 - 307
  • [6] ELEMENTARY PROCESSES IN THE MBE GROWTH OF GAAS
    JOYCE, BA
    SHITARA, T
    YOSHINAGA, A
    VVEDENSKY, DD
    NEAVE, JH
    ZHANG, J
    [J]. APPLIED SURFACE SCIENCE, 1992, 60-1 : 200 - 209
  • [7] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
    LEWIS, BF
    LEE, TC
    GRUNTHANER, FJ
    MADHUKAR, A
    FERNANDEZ, R
    MASERJIAN, J
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 419 - 424
  • [8] Liu Xingquan, 1997, Chinese Journal of Semiconductors, V18, P408
  • [9] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS
    NEAVE, JH
    JOYCE, BA
    DOBSON, PJ
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 179 - 184
  • [10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENT OF SURFACE-DIFFUSION DURING THE GROWTH OF GALLIUM-ARSENIDE BY MBE
    VANHOVE, JM
    COHEN, PI
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 13 - 18
1