Structural Stability and Electronic Structures of a Curved Graphene Sheet on Stepped SiC(0001) Surface

被引:0
|
作者
Ono, Youky [1 ,2 ]
Nara, Jun [1 ,2 ]
Ohno, Takahisa [1 ,2 ,3 ]
机构
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[2] MARCEED Mat Res Consortium Energy Efficient Elect, Tsukuba, Ibaraki 3050044, Japan
[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
关键词
GRAPHITE; LAYERS; FILMS;
D O I
10.7566/JPSJ.85.034707
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The structural stabilities and electronic structures of graphene sheets laid on stepped SiC(0001) surfaces are theoretically investigated by density functional theory calculations. To precisely estimate the van der Waals (vdW) binding energy between graphene sheets and SiC surfaces, the vdW density functional (vdW-DF) was used. We have found that a graphene sheet put over a stepped SiC surface has a curved structure bridging the upper and lower terraces without making any bonds to the atoms of the step. This bridging curved structure of the graphene sheet is mainly stabilized by the vdW attraction force. With respect to the electronic structure, the original sp(2) network is maintained in the curved graphene sheet. By comparing the local density of states (LDOS) of carbon atoms in the curved graphene sheet, we also found that the electronic structure of each carbon atom largely depends on the distance between the carbon atom and the surface.
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页数:6
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