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- [1] Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effectAPPLIED PHYSICS LETTERS, 2013, 102 (11)Lee, Ki-Seung论文数: 0 引用数: 0 h-index: 0机构: Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaLee, Seo-Won论文数: 0 引用数: 0 h-index: 0机构: Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaMin, Byoung-Chul论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaLee, Kyung-Jin论文数: 0 引用数: 0 h-index: 0机构: Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136713, South Korea Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
- [2] Switching-current reduction in perpendicular-anisotropy spin torque magnetic tunnel junctionsJOURNAL OF APPLIED PHYSICS, 2010, 108 (01)Heinonen, O. G.论文数: 0 引用数: 0 h-index: 0机构: Seagate Technol, Recording Heads Operat, Bloomington, MN 55435 USA Seagate Technol, Recording Heads Operat, Bloomington, MN 55435 USADimitrov, D. V.论文数: 0 引用数: 0 h-index: 0机构: Seagate Technol, Recording Heads Operat, Bloomington, MN 55435 USA Seagate Technol, Recording Heads Operat, Bloomington, MN 55435 USA
- [3] Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effectarXiv, 2021,Hu, Shuai论文数: 0 引用数: 0 h-index: 0机构: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, China Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, ChinaShao, Ding-Fu论文数: 0 引用数: 0 h-index: 0机构: Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln,NE,68588-0299, United States Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, ChinaYang, Huanglin论文数: 0 引用数: 0 h-index: 0机构: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, China Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, ChinaTang, Meng论文数: 0 引用数: 0 h-index: 0机构: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, China Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, ChinaYang, Yumeng论文数: 0 引用数: 0 h-index: 0机构: School of Information Science and Technology, ShanghaiTech University, Shanghai,201210, China Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, ChinaFan, Weijia论文数: 0 引用数: 0 h-index: 0机构: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, China Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, ChinaZhou, Shiming论文数: 0 引用数: 0 h-index: 0机构: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, China Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, ChinaTsymbal, Evgeny Y.论文数: 0 引用数: 0 h-index: 0机构: Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln,NE,68588-0299, United States Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, ChinaQiu, Xuepeng论文数: 0 引用数: 0 h-index: 0机构: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, China Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai,200092, China
- [4] Efficient perpendicular magnetization switching by a magnetic spin Hall effect in a noncollinear antiferromagnetNATURE COMMUNICATIONS, 2022, 13 (01)Hu, Shuai论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaShao, Ding-Fu论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaYang, Huanglin论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaPan, Chang论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaFu, Zhenxiao论文数: 0 引用数: 0 h-index: 0机构: ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China ShanghaiTech Univ, Shanghai Engn Res Ctr Energy Efficient & Custom A, Shanghai 201210, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTang, Meng论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaYang, Yumeng论文数: 0 引用数: 0 h-index: 0机构: ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China ShanghaiTech Univ, Shanghai Engn Res Ctr Energy Efficient & Custom A, Shanghai 201210, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaFan, Weijia论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaZhou, Shiming论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTsymbal, Evgeny Y.论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaQiu, Xuepeng论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
- [5] Efficient perpendicular magnetization switching by a magnetic spin Hall effect in a noncollinear antiferromagnetNature Communications, 13Shuai Hu论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringDing-Fu Shao论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringHuanglin Yang论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringChang Pan论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringZhenxiao Fu论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringMeng Tang论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringYumeng Yang论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringWeijia Fan论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringShiming Zhou论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringEvgeny Y. Tsymbal论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and EngineeringXuepeng Qiu论文数: 0 引用数: 0 h-index: 0机构: Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering
- [6] Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings, 2024, : 1584 - 1589Pruckner, B.论文数: 0 引用数: 0 h-index: 0机构: Christian Doppler Laboratory For Nonvolatile Magnetoresistive Memory And Logic, Austria Silvaco Europe Ltd., Compass Point, Cambridge, St Ives,PE27 5JL, United KingdomJørstad, N.论文数: 0 引用数: 0 h-index: 0机构: Christian Doppler Laboratory For Nonvolatile Magnetoresistive Memory And Logic, Austria Silvaco Europe Ltd., Compass Point, Cambridge, St Ives,PE27 5JL, United KingdomHádamek, T.论文数: 0 引用数: 0 h-index: 0机构: Christian Doppler Laboratory For Nonvolatile Magnetoresistive Memory And Logic, Austria Silvaco Europe Ltd., Compass Point, Cambridge, St Ives,PE27 5JL, United KingdomGoes, W.论文数: 0 引用数: 0 h-index: 0机构: Silvaco Europe Ltd., Compass Point, Cambridge, St Ives,PE27 5JL, United Kingdom Silvaco Europe Ltd., Compass Point, Cambridge, St Ives,PE27 5JL, United KingdomSelberherr, S.论文数: 0 引用数: 0 h-index: 0机构: Institute For Microelectronics, Tu Wien, Gußhausstraße 27-29, Wien,A-1040, Austria Silvaco Europe Ltd., Compass Point, Cambridge, St Ives,PE27 5JL, United KingdomSverdlov, V.论文数: 0 引用数: 0 h-index: 0机构: Christian Doppler Laboratory For Nonvolatile Magnetoresistive Memory And Logic, Austria Institute For Microelectronics, Tu Wien, Gußhausstraße 27-29, Wien,A-1040, Austria Silvaco Europe Ltd., Compass Point, Cambridge, St Ives,PE27 5JL, United Kingdom
- [7] Phase diagram and optimal switching induced by spin Hall effect in a perpendicular magnetic layerPHYSICAL REVIEW B, 2015, 91 (21):Yan, Shu论文数: 0 引用数: 0 h-index: 0机构: Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USABazaliy, Ya. B.论文数: 0 引用数: 0 h-index: 0机构: Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA
- [8] Current induced magnetization switching in Pt/Co/Cr structures with enhanced perpendicular magnetic anisotropy and spin Hall effectAPPLIED PHYSICS EXPRESS, 2019, 12 (04)Cui, Baoshan论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China Univ Calif Los Angeles, Dept Elect & Comp Engn, Los Angeles, CA 90095 USA Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaYun, Jijun论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaYang, Kunya论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaWu, Hao论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Los Angeles, Dept Elect & Comp Engn, Los Angeles, CA 90095 USA Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaZhu, Zhendong论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaZuo, Yalu论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaYang, Dezheng论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaGao, Meizhen论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaZhang, Zongzhi论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaXi, Li论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaWang, Kang L.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Los Angeles, Dept Elect & Comp Engn, Los Angeles, CA 90095 USA Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
- [9] Spin Hall effect and current induced magnetic switching in antiferromagnetic IrMnAIP ADVANCES, 2018, 8 (11):Qian, Lijuan论文数: 0 引用数: 0 h-index: 0机构: Brown Univ, Dept Phys, Providence, RI 02912 USA Brown Univ, Dept Phys, Providence, RI 02912 USAChen, Wenzhe论文数: 0 引用数: 0 h-index: 0机构: Brown Univ, Dept Phys, Providence, RI 02912 USA Brown Univ, Dept Phys, Providence, RI 02912 USAWang, Kang论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Lab Solid State Microstruct, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China Brown Univ, Dept Phys, Providence, RI 02912 USAWu, Xiaoshan论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Lab Solid State Microstruct, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China Brown Univ, Dept Phys, Providence, RI 02912 USAXiao, Gang论文数: 0 引用数: 0 h-index: 0机构: Brown Univ, Dept Phys, Providence, RI 02912 USA Brown Univ, Dept Phys, Providence, RI 02912 USA
- [10] Critical switching current density induced by spin Hall effect in magnetic structures with first- and second-order perpendicular magnetic anisotropyScientific Reports, 7Seok Jin Yun论文数: 0 引用数: 0 h-index: 0机构: Department of Materials Science and Engineering,Kyung-Jin Lee论文数: 0 引用数: 0 h-index: 0机构: Department of Materials Science and Engineering,Sang Ho Lim论文数: 0 引用数: 0 h-index: 0机构: Department of Materials Science and Engineering,